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ZTX550QSTZ

Part No ZTX550QSTZ
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PWR MID PERF TRANSISTOR EP3 AMMO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 1 W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible)
Standard Package 2,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 413577-ZTX550QSTZ
Ultra Librarian 3D Model Ultra Librarian ZTX550QSTZ CAD Model

Description

The ZTX550QSTZ is a high-performance PNP transistor from Diodes Incorporated, designed to offer a blend of efficiency and reliability for a wide range of applications. This transistor is a part of Diodes Incorporated’s ZTX series, which is known for its high-quality semiconductor products. The ZTX550QSTZ is particularly suitable for use in power management tasks, signal processing, and other electronic circuits requiring a robust transistor with a fast switching response.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, which means it is controlled by the lack of current at its base and primarily used in positive ground configurations.
  • Voltage - Collector Emitter Breakdown (Max): -45V - The ZTX550QSTZ can handle up to -45V across its collector-emitter junction, making it suitable for various medium voltage applications.
  • Current - Collector (Ic) (Max): -1A - It supports a maximum collector current of -1A, allowing it to drive moderate loads in a circuit.
  • Power - Max: 1W - With a maximum power dissipation of 1W, this transistor can perform well in circuits without requiring significant heat sinking.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, -10V - The ZTX550QSTZ offers a DC current gain of 100 at 500mA and -10V, ensuring efficient current amplification.
  • Frequency - Transition: >100MHz - The transition frequency is greater than 100MHz, which makes it suitable for high-speed switching applications.

Applications

The versatility of the ZTX550QSTZ allows it to be used in a wide array of electronic applications. These include:

  • Power regulation modules
  • Audio amplifiers
  • Signal amplification
  • Switching circuits
  • Driver stages in high-fidelity amplifiers and sound equipment

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet stringent industry standards. The ZTX550QSTZ is built with reliability in mind, ensuring stable performance over its lifetime and is suitable for commercial, industrial, and even high-reliability applications where consistent operation is critical.

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