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AUIRFB8407

Part No AUIRFB8407
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 195A TO220AB
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7330 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number AUIRFB8407
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567125-AUIRFB8407
Ultra Librarian 3D Model Ultra Librarian AUIRFB8407 CAD Model

Description

The AUIRFB8407 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET®
  • Use: discrete semiconductor products, specifically in transistors and FETs
  • Vdss: 40 V
  • Id: 195A @ 25°C
  • Rds On: 2mOhm @ 100A and 10V
  • Package: TO-220-3
  • Mounting: through hole
  • Qg: 225nC @ 10V
  • Ciss: 7330pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 230W
  • Status: active
  • Usage: widely used in the electronics industry

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.6031 $59.4279
22+ $5.4180 $119.1960
34+ $5.2487 $178.4558
46+ $5.0794 $233.6524
59+ $4.9101 $289.6959
79+ $4.4022 $347.7738
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,441 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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