The AUIRFP064N is an N-Channel MOSFET transistor from Infineon Technologies.

• Series: It belongs to the HEXFET series and is designed for use in discrete semiconductor products.
• Drain to Source Voltage (Vdss): This MOSFET features a drain to source voltage (Vdss) of 55V
• Continuous Drain Current (Id): a continuous drain current (Id) of 110A @ 25°C.
• Rds On (Max): The Rds On (Max) is 8mOhm @ 59A and 10V, ensuring low power loss.
• Gate Charge (Qg): The gate charge (Qg) is 170 nC @ 10V
• Input Capacitance (Ciss): the input capacitance (Ciss) is 4000 pF @ 25V.
• Power Dissipation: With a maximum power dissipation of 200W, this MOSFET is suitable for a wide range of applications.
• Package: It is housed in a TO-247-3 package and can be mounted through hole.
• Status: The AUIRFP064N is an active product and operates in a temperature range of -55°C to 175°C.