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AUIRFR120Z

Part No AUIRFR120Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description PFET, 8.7A I(D), 100V, 0.19OHM,
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567136-AUIRFR120Z
Ultra Librarian 3D Model Ultra Librarian AUIRFR120Z CAD Model

Description

The AUIRFR120Z is a N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Series: HEXFET
  • Application: Discrete Semiconductor Products, specifically in Transistors - FETs, MOSFETs
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 8.7A @ 25°C
  • Rds On: 190mOhm @ 5.2A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 25µA
  • Power Dissipation (Max): 35W @ Tc
  • Mounting Type: Surface Mountable
  • Package: TO-252-3, DPak

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5047 $58.0405
280+ $0.4146 $116.0880
435+ $0.4008 $174.3480
600+ $0.3881 $232.8600
770+ $0.3754 $289.0580
1,035+ $0.3361 $347.8635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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