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AUIRFR120ZTRL

Part No AUIRFR120ZTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 8.7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 122818-AUIRFR120ZTRL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRFR120ZTRL CAD Model

Description

AUIRFR120ZTRL - High-Performance MOSFET

The AUIRFR120ZTRL is a high-efficiency N-channel MOSFET designed to provide superior switching performance for various power management applications. Manufactured with advanced technology, it ensures enhanced power efficiency, reduced energy loss, and excellent thermal stability.

  • DC-DC converters
  • Battery management systems
  • Motor control applications

Features and Benefits:

  • Low On-Resistance: Minimizes power loss, enhancing energy efficiency.
  • High-Speed Switching: Reduces switching losses for improved performance.
  • Enhanced Thermal Management: Ensures reliable operation in high-temperature environments.
  • Robust Performance: Offers high reliability under variable load conditions.

With its compact packaging and exceptional electrical characteristics, the AUIRFR120ZTRL serves as a go-to solution for designers seeking reliability and performance in power electronics applications.

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