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Same model may have multiple batches, images only for reference.
AUIRFR2307Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFR2307Z

Part No AUIRFR2307Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 42A DPAK
Datasheet
AUIRFR2307Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2190pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020748-AUIRFR2307Z
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian AUIRFR2307Z CAD Model

Description

The Infineon Technologies 1020748-AUIRFR2307Z is a high-performance N-channel MOSFET transistor designed for use in various applications.

  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 42A
  • Gate-Source Threshold Voltage @ 100μA: 4V
  • Maximum Gate Charge @ 10V: 75nC
  • Maximum Input Capacitance @ 25V: 2190pF
  • Maximum Rds On @ Id, Vgs: 16 mOhm @ 32A, 10V

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25+ $4.6558 $116.3950
39+ $4.5103 $175.9017
53+ $4.3647 $231.3291
69+ $4.2192 $291.1248
92+ $3.7826 $347.9992
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Availability: 43,500 pieces
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