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AUIRFR3607

Part No AUIRFR3607
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 3070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020751-AUIRFR3607
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFR3607 CAD Model

Description

Infineon Technologies presents the AUIRFR3607, an N-Channel MOSFET electronic component designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 56A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Package: D-Pak
  • Operating Temperature: -55°C to 175°C
  • Drive Voltage: 10V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.7957 $58.7097
51+ $2.2940 $116.9940
78+ $2.2222 $173.3316
108+ $2.1506 $232.2648
139+ $2.0789 $288.9671
186+ $1.8639 $346.6854
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,124 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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