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Same model may have multiple batches, images only for reference.
AUIRFR9024NTRL Infineon Technologies
Same model may have multiple batches, images only for reference.

AUIRFR9024NTRL

Part No AUIRFR9024NTRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 11A DPAK
Datasheet
AUIRFR9024NTRL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020764-AUIRFR9024NTRL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFR9024NTRL CAD Model

Description

The Infineon Technologies AUIRFR9024NTRL is a P-channel MOSFET designed for use in a wide range of applications in the electronics industry.

  • Maximum Power Dissipation: 38W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 11A
  • Gate Charge: 19nC @ 10V
  • Package: D-PAK (TO-252AA)
  • Maximum Rds On: 175 mOhm @ 6.6A and 10V
  • Applications: High-Performance Switching Circuits, Motor Control Circuits, and Voltage Regulators

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83+ $3.0299 $251.4817
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MOQ: 13 pcs
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