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AUIRFS6535

Part No AUIRFS6535
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 300V 19A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 150μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 2340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 210W (Tc)
Maximum Rds On at Id,Vgs 185 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020779-AUIRFS6535
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian AUIRFS6535 CAD Model

Description

The Infineon Technologies AUIRFS6535 is an N-channel MOSFET designed for use in industrial applications.

  • Breakdown Voltage: 300V
  • Continuous Drain Current: 19A @ 25°C
  • Power Dissipation: 210W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 150μA
  • Maximum Rds On at Id, Vgs: 185 mOhm @ 11A, 10V
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4998 $52.4930
85+ $1.2307 $104.6095
130+ $1.1922 $154.9860
175+ $1.1537 $201.8975
225+ $1.1153 $250.9425
305+ $0.9999 $304.9695
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,888 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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