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AUIRFZ24NS

Part No AUIRFZ24NS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 17A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 370pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1020785-AUIRFZ24NS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian AUIRFZ24NS CAD Model

Description

The IRFZ24NS is a N-channel MOSFET transistor manufactured by Infineon Technologies with a drain-source breakdown voltage of 55V and a continuous drain current of 17A at Tc.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 17A @ Tc
  • Maximum Power Dissipation: 3.8W (Ta) and 45W (Tc)
  • Maximum Rds On: 70 mOhm @ 10A, 10V
  • Package: D-PAK (TO-252AA)
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: active product
  • Temperature Range: -55°C to 175°C (TJ)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Mainly Used: discrete semiconductor products
  • Popularity: popular in the market

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,520 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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