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Same model may have multiple batches, images only for reference.
AUIRFZ48N Real Image
Same model may have multiple batches, images only for reference.

AUIRFZ48N

Part No AUIRFZ48N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 55V 69A TO-220AB
Datasheet
AUIRFZ48N Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1020791-AUIRFZ48N
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFZ48N CAD Model

Description

The AUIRFZ48N is an N-channel MOSFET from Infineon Technologies.

  • Maximum Power Dissipation: 160W
  • Continuous Drain Current @ 25°C: 69A
  • On-Resistance: 14 mOhm @ 40A and 10V
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 55V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9208 $67.2280
75+ $1.5766 $118.2450
115+ $1.5269 $175.5935
160+ $1.4784 $236.5440
205+ $1.4287 $292.8835
275+ $1.2809 $352.2475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 99,500 pieces
MOQ: 35 pcs
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