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Same model may have multiple batches, images only for reference.
AUIRLR120N International Rectifier
Same model may have multiple batches, images only for reference.

AUIRLR120N

Part No AUIRLR120N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE HEXFET N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 185mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567225-AUIRLR120N
Ultra Librarian 3D Model Ultra Librarian AUIRLR120N CAD Model

Description

The AUIRLR120N is an N-Channel MOSFET from Infineon Technologies.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 10A @ 25°C
  • On-Resistance (Rds On): 185mOhm @ 6A and 10V
  • Gate Threshold Voltage (Vgs(th)): 2V @ 250µA
  • Gate Charge (Qg): 20nC @ 5V
  • Package: TO-252-3
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3638 $58.2080
390+ $0.2980 $116.2200
600+ $0.2888 $173.2800
830+ $0.2795 $231.9850
1,070+ $0.2703 $289.2210
1,430+ $0.2426 $346.9180
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Availability: 75,800 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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