The BAR90-02LE4350 is a silicon PIN diode manufactured by Infineon Technologies. This diode is designed for use as a variable resistor in RF and microwave applications. It features a low forward resistance and a long carrier lifetime, making it suitable for attenuators, switches, and phase shifters.

Applications

• RF attenuators
• RF switches
• Phase shifters
• Voltage variable resistors
• Automotive radar systems

Features

• Low forward resistance: Minimizes insertion loss in RF circuits.
• Long carrier lifetime: Ensures low distortion and good linearity.
• Small capacitance: Allows for high-frequency operation.
• Surface mount package: Suitable for automated assembly.
• RoHS Compliant: Pb-free and environmentally friendly.

Benefits

• Improved RF performance.
• Reduced distortion in RF circuits.
• Simplified circuit design.
• Compact and efficient solution.
• Meets environmental regulations.

Technical Specifications

The BAR90-02LE4350 has a reverse voltage of 30 V and a forward current of 50 mA. The typical forward resistance at 10 mA is 1.8 Ω. It is packaged in a SOD-323. Please consult the official Infineon datasheet for detailed electrical specifications, package dimensions, and application information.