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Same model may have multiple batches, images only for reference.
BC848AE6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BC848AE6327

Part No BC848AE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT-23
Datasheet
BC848AE6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 110 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 200456-BC848AE6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BC848AE6327 CAD Model

Description

BC848AE6327 - General Purpose NPN Bipolar Junction Transistor

The BC848AE6327 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This reliable device features a maximum collector current of 100mA and a collector-emitter voltage of 30V, making it ideal for various electronic circuits where efficient performance is required.

  • Applications & Projects:
    • Signal amplification in audio circuits
    • Switching applications in microcontroller projects
    • Voltage regulation circuits
    • Current limiting devices
  • Key Features & Benefits:
    • Compact SOT-23 package for space-saving designs
    • Low power consumption with high efficiency
    • High current gain for effective amplification
    • Robust performance with low noise characteristics
  • Additional Details:
    • Part number: BC848AE6327
    • RoHS compliant and lead-free

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