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Same model may have multiple batches, images only for reference.
BC848AE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BC848AE6327HTSA1

Part No BC848AE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 30V 0.1A SOT-23
Datasheet
BC848AE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 110 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022459-BC848AE6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC848AE6327HTSA1 CAD Model

Description

The Infineon Technologies BC848AE6327HTSA1 is a discrete semiconductor product designed for use in a wide range of applications.

  • Device Type: NPN Transistor
  • Maximum Collector-Emitter Breakdown Voltage: 30V
  • Maximum Power Dissipation: 330mW
  • Maximum Vce (sat) @ 5mA, 100mA: 600mV
  • Typical Gain (hFE) (Min) @ 2mA, 5V: 110
  • Frequency Transition: 250MHz
  • Mounting Type: SMD (SMT)
  • Case/Package: PG-SOT23-3
  • Maximum Current Collector: 100mA
  • Supply and Demand Status: Sufficient

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