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BC850BE6327

Part No BC850BE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS NPN 45V 0.1A SOT23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 330 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Standard Package 6,836 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 863641-BC850BE6327
Ultra Librarian 3D Model Ultra Librarian BC850BE6327 CAD Model

Description

The 863641-BC850BE6327 is a single bipolar transistor from Infineon Technologies.

  • Series: BC850B
  • Applications: Discrete semiconductor
  • Transistor Type: NPN
  • Maximum Power Dissipation: 330mW
  • Collector-Emitter Breakdown Voltage: 45V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 600mV @ 5mA, 100mA
  • Collector Cutoff Current: 15nA
  • DC Current Gain: 200 @ 2mA and 5V
  • Transition Frequency: 250MHz
  • Mounting: Surface mountable
  • Package: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0874 $50.2550
1,395+ $0.0717 $100.0215
2,160+ $0.0695 $150.1200
2,980+ $0.0672 $200.2560
3,850+ $0.0650 $250.2500
5,150+ $0.0583 $300.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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