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BC858B

Part No BC858B
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 30V 0.1A SOT23-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 250 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Standard Package 7,818 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 569467-BC858B
Ultra Librarian 3D Model Ultra Librarian BC858B CAD Model

Description

The BC858B is a PNP bipolar transistor from Infineon Technologies.

  • Package: bulk package
  • Maximum Power Dissipation: 250mW
  • Collector-Emitter Breakdown Voltage: 30V
  • Maximum Collector Current (Ic): 100mA
  • Vce Saturation: 650mV @ 5mA base current (Ib) and 100mA collector current (Ic)
  • Collector Cutoff Current (ICBO): 15nA
  • DC Current Gain (hFE): 220 @ 2mA collector current (Ic) and 5V collector-emitter voltage (Vce)
  • Operating Temperature Range: -55°C to 150°C
  • Suitability: various electronic circuits and applications that require a PNP bipolar transistor with low power dissipation and high current gain

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2323 $51.1060
460+ $0.2176 $100.0960
715+ $0.2103 $150.3645
1,025+ $0.1956 $200.4900
1,330+ $0.1882 $250.3060
1,660+ $0.1809 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 800,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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