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BC858BFE6327

Part No BC858BFE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 30V 0.1A 250mW Automotive 3-Pin TSFP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Infineon Technologies
Win Source Part Number 232306-BC858BFE6327
Popularity Low
Supply and Demand Status Sufficient
Family Name BC858BF
Introduction Date April 29, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BC858BFE6327 CAD Model

Description

BC858BFE6327 - PNP Bipolar Transistor

The BC858BFE6327 is a PNP bipolar junction transistor manufactured for reliable use in low-power amplifier and switching applications. Its compact size and performance characteristics make it suitable for modern electronic devices.

  • Applications:
    • Low-power amplification
    • General switch applications
    • FM/RF applications
  • Features & Benefits:
    • High current gain bandwidth product
    • Low collector-emitter saturation voltage
    • Robust construction for long-term reliability
  • Additional Details:
    • Max Collector-Emitter Voltage: 45V
    • Maximum Gain: 130
    • Available in reel packaging for automated assembly

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