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Same model may have multiple batches, images only for reference.
BCP 53-16 E6433 Real Image
Same model may have multiple batches, images only for reference.

BCP 53-16 E6433

Part No BCP 53-16 E6433
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-223-4
Collector Base Voltage (VCBO) 100 V
Collector Emitter Breakdown Voltage 80 V
Collector Emitter Voltage (VCEO) 80 V
Current Rating -1 A
Element Configuration Single
Emitter Base Voltage (VEBO) 5 V
Gain Bandwidth Product 125 MHz
Lead Free Yes
Max Collector Current 1 A
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 4
Polarity PNP
RoHS Compliant
Transition Frequency 125 MHz
Voltage Rating (DC) -80 V
Win Source Part Number 996619-BCP 53-16 E6433
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BCP 53-16 E6433 CAD Model

Description

The Infineon Technologies BCP 53-16 E6433 is a PNP RF transistor that has a gain bandwidth product of 125 MHz.

  • Power Dissipation: 2 W
  • Collector Base Voltage: 100 V
  • Category: alternative parts cross-reference BCP 53-16 E6433, BCP53-16E-6433, BCP53-16E6433, and BCP5316E6433

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