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Same model may have multiple batches, images only for reference.
BCR 191T E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BCR 191T E6327

Part No BCR 191T E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SC75
Datasheet
BCR 191T E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 50 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 1022711-BCR 191T E6327
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Lighting, LED Lighting
Ultra Librarian 3D Model Ultra Librarian BCR 191T E6327 CAD Model

Description

The Infineon Technologies PNP - Pre-Biased transistor is an electronic component with a maximum current collector of 100mA and a VCEO maximum collector-emitter breakdown voltage of 50V.

  • Gain (hFE) (min): 50 @ 5mA, 5V
  • Maximum Power Dissipation: 250mW
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand: Sufficient
  • Used in: Lighting and LED lighting
  • Package: PG-SC-75

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Quantity Unit Price Ext. Price
1,675+ $0.0346 $57.9550
4,070+ $0.0284 $115.5880
6,305+ $0.0275 $173.3875
8,700+ $0.0266 $231.4200
11,215+ $0.0258 $289.3470
15,000+ $0.0231 $346.5000
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