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BCR112T E6327

Part No BCR112T E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 20 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 140MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 200850-BCR112T E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR112T E6327 CAD Model

Description

Overview

The BCR112T E6327 is a versatile and efficient NPN digital transistor. It is designed to combine a transistor with a resistor network into a single package, providing ease of use in simpler circuit designs.

Applications

  • Switching applications
  • Signal processing
  • Driver for small loads
  • Interfacing logic gates to high-current loads
  • Portable electronic devices

Features

  • Integrated bias resistors
  • Compact package design for space-saving
  • Low input current
  • High switching speed
  • RoHS compliant

Benefits

  • Simplified circuit design
  • Cost-effective solution
  • Reduction in component count
  • High reliability

Additional Details

With its compact design and inherent reliability, the BCR112T E6327 is suitable for various electronic projects requiring efficient switching and interfacing solutions.

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Shipping Information

Shipped from HK warehouse
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