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BCR112T

Part No BCR112T
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SC75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 20 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 140MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 76294-BCR112T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR112T CAD Model

Description

Product Overview

The BCR112T is designed to cater to applications requiring stable and efficient electronic switching. This NPN transistor brings robust performance within a compact form factor, making it a versatile component in various design environments.

Features and Benefits

  • High gain bandwidth product for efficient performance
  • Low noise figure for clean operation
  • Compact design for seamless integration
  • Extended operational life due to superior thermal design

Applications and Projects

  • Audio amplifiers
  • Power management systems
  • Industrial control systems
  • Robotics and automation

The BCR112T is particularly suited for engineers and developers working on projects that demand reliability and efficiency combined with minimal space usage.

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