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BCR133E6327HTSA1

Part No BCR133E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 30 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 130MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 111969-BCR133E6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR133E6327HTSA1 CAD Model

Description

Overview

The BCR133E6327HTSA1 is an advanced transistor solution tailored for high-efficiency power conversion tasks. It provides exceptional control in regulating electrical power throughout various applications.

Features and Benefits

  • Enhanced power handling for demanding environments
  • Low noise operation suits sensitive applications
  • Energy-efficient design minimizes thermal footprint

Applications

  • High-efficiency power converters
  • Renewable energy systems
  • Advanced computing power supplies

Ideal for projects requiring superior power control and minimal energy loss.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2531 $56.9475
540+ $0.2078 $112.2120
835+ $0.2013 $168.0855
1,155+ $0.1948 $224.9940
1,490+ $0.1883 $280.5670
1,995+ $0.1688 $336.7560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,670 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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