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BCR158E6327HTSA1

Part No BCR158E6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.2W SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022696-BCR158E6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BCR158E6327HTSA1 CAD Model

Description

The BCR158E6327HTSA1 is a PNP - Pre-Biased transistor electronic component from Infineon Technologies that is designed to offer a maximum collector-emitter breakdown voltage of 50V.

  • Manufacturer: Infineon Technologies
  • Device Type: PNP - Pre-Biased Transistor
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Collector Current: 100mA
  • Maximum Power Dissipation: 200mW
  • Typical Gain (hFE) (Min): 70 @ 5mA, 5V
  • Frequency Transition: 200MHz
  • Case/Package: PG-SOT23-3
  • Maximum Vce (sat): 300mV @ 500μA, 10mA
  • Resistor Values: R1: 2.2k, R2: 47k

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Pricing & Ordering

Quantity Unit Price Ext. Price
875+ $0.0741 $64.8375
2,125+ $0.0609 $129.4125
3,290+ $0.0590 $194.1100
4,540+ $0.0571 $259.2340
5,855+ $0.0553 $323.7815
7,855+ $0.0494 $388.0370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,800 pieces
MOQ: 875 pcs
Order Increment : 1 pcs
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