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BCR198W E6327

Part No BCR198W E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 250MW SOT323-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 190MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 200905-BCR198W E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR198W E6327 CAD Model

Description

Overview

A reliable choice for various electronic applications, the BCR198W E6327 is an NPN transistor offering excellent performance in both switching and amplification roles. This component is engineered to support a range of electronic devices with precision.

Features and Benefits

  • Minimal saturation voltage ensuring efficient power utilization.
  • Rugged design for long-term use in demanding conditions.
  • Ideal for low power applications requiring consistent output.

Applications

  • Digital circuits
  • AC/DC conversion systems
  • Instrumentation

Additional Details

Manufacturer: N/A. The BCR198W E6327 is crafted to suit a multitude of applications, offering a reliable and durable choice for engineers globally.

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Shipping Information

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