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Same model may have multiple batches, images only for reference.
BCR35PNE6433HTMA1 Real Image
Same model may have multiple batches, images only for reference.

BCR35PNE6433HTMA1

Part No BCR35PNE6433HTMA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS NPN/PNP PREBIAS SOT363
Datasheet
BCR35PNE6433HTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 70 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Frequency - Transition 150MHz
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 1022724-BCR35PNE6433HTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCR35PNE6433HTMA1 CAD Model

Description

The Infineon Technologies BJT is a dual transistor designed for use in discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Product Type: BJT
  • Type: Dual Transistor
  • Mounting: SMD (SMT)
  • Package: PG-SOT363-6
  • Current Collector (Max): 100mA
  • Collector-Emitter Breakdown Voltage (Max): 50V
  • Vce (sat) (Max): 300mV @ 500μA, 10mA
  • Gain (hFE) (Min): 70 @ 5mA, 5V
  • Status: Obsolete (EOL)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2971 $50.5070
415+ $0.2438 $101.1770
640+ $0.2361 $151.1040
880+ $0.2285 $201.0800
1,135+ $0.2209 $250.7215
1,515+ $0.1981 $300.1215
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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