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Same model may have multiple batches, images only for reference.
BCW61BE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BCW61BE6327HTSA1

Part No BCW61BE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 0.1A SOT-23
Datasheet
BCW61BE6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 32V
Max Vce (sat) 550mV @ 1.25mA, 50mA
Collector Cut-off Current(Max) 20nA (ICBO)
Typical Gain (hFE) (Min) 180 @ 2mA, 5V
Maximum Power Dissipation 330mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 1022777-BCW61BE6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BCW61BE6327HTSA1 CAD Model

Description

The Infineon Technologies 1022777-BCW61BE6327HTSA1 is a PNP transistor designed for various discrete semiconductor products.

  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 32V
  • Typical Gain: 180 @ 2mA and 5V
  • Package: PG-SOT23-3
  • Popularity: medium

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