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IPA65R600E6XKSA1

Part No IPA65R600E6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO220-FP / N-Channel 650 V 7.3A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Power Dissipation (Max) 28W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO220-FP
Case / Package TO-220-3 Full Pack
Base Product Number IPA65R600
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SP000799140,IPA65R600E6-ND,IPA65R600E6
Standard Package 50
Win Source Part Number 1325365-IPA65R600E6XKSA1
Ultra Librarian 3D Model Ultra Librarian IPA65R600E6XKSA1 CAD Model

Description

The Infineon Technologies IPA65R600E6XKSA1 is an N-channel MOSFET transistor that has a drain to source voltage of 650V and a continuous drain current of 7.3A @ 25°C.

  • Rds On (Max): 600mOhm @ 2.1A and 10V
  • Gate Charge: 23nC @ 10V
  • Input Capacitance: 440pF @ 100V
  • Gate-Source Threshold Voltage: 3.5V @ 210μA
  • Package: PG-TO220-FP
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7594 $52.7820
70+ $1.4437 $101.0590
110+ $1.3985 $153.8350
150+ $1.3534 $203.0100
195+ $1.3083 $255.1185
260+ $1.1730 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,940 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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