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Same model may have multiple batches, images only for reference.
BCW61CE6327 Real Image
Same model may have multiple batches, images only for reference.

BCW61CE6327

Part No BCW61CE6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 0.1A SOT23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Infineon Technologies
Package Bulk
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA, 5V
Power - Max 330 mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
Standard Package 6,869 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 737343-BCW61CE6327
Ultra Librarian 3D Model Ultra Librarian BCW61CE6327 CAD Model

Description

The 737343-BCW61CE6327 is a PNP bipolar transistor from Infineon Technologies.

  • Power Dissipation: 330mW
  • Collector-Emitter Voltage: 32V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 550mV @ Ib=1.25mA and Ic=50mA
  • DC Current Gain (hFE): 250 @ Ic=2mA and Vce=5V
  • Frequency Transition: 250MHz
  • Package: TO-236-3, SC-59, SOT-23-3
  • Operating Temperature Range: Up to 150°C (TJ)

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11,115+ $0.0208 $231.1920
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18,750+ $0.0185 $346.8750
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