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Same model may have multiple batches, images only for reference.
BCX5210E6327
Same model may have multiple batches, images only for reference.

BCX5210E6327

Part No BCX5210E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-89
Collector Base Voltage (VCBO) 60 V
Collector Emitter Saturation Voltage 500 mV
Collector Emitter Voltage (VCEO) 60 V
Emitter Base Voltage (VEBO) 5 V
Height 1.5 mm
Length 4.5 mm
Max Collector Current 1 A
Max Frequency 125 MHz
Maximum Operating Temperature 150 °C
Max Power Dissipation 2 W
Min Operating Temperature -65 °C
Mount Surface Mount
Number of Pins 4
Radiation Hardening No
RoHS Compliant
Width 2.5 mm
Win Source Part Number 967133-BCX5210E6327
Categories RF Transistors(BJT)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BCX5210E6327 CAD Model

Description

The BCX5210E6327 is an RF transistor (BJT) that is widely used in various electronic circuits.

  • Transistor Type: NPN
  • Maximum Collector-Emitter Voltage: 60V
  • Maximum Collector Current: 1A
  • Package: SOT-89
  • Maximum Frequency: 125 MHz
  • Manufacturer: Infineon Technologies
  • Popularity: Low
  • RoHS: Compliant
  • Maximum Power Dissipation: 2W

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