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Same model may have multiple batches, images only for reference.
BF770AE6327 Real Image
Same model may have multiple batches, images only for reference.

BF770AE6327

Part No BF770AE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SOT-23
Datasheet
BF770AE6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 6GHz
Noise Figure (dB Typ @ f) 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Gain 9.5dB to 14.5dB
Maximum Power Dissipation 300mW
Typical Gain (hFE) (Min) 70 @ 30mA, 8V
Maximum Current Collector 90mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 201048-BF770AE6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BF770AE6327 CAD Model

Description

BF770AE6327 Transistor Description

The BF770AE6327 is a versatile NPN transistor tailored for high-speed switching applications. It presents a balanced combination of speed and efficiency.

  • Features and Benefits:
    • High-speed switching capabilities
    • Excellent linearity in operation
    • Durable encapsulation ensuring long life
  • Applications:
    • Data transmission equipment
    • Microprocessor-driven applications
    • RF receivers

The BF770AE6327 is ideal for projects requiring rapid and accurate signal processing.

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