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MCH3106-TL

Part No MCH3106-TL
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 12V 3A MCPH3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 165mV @ 30mA, 1.5A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 280MHz
Mounting SMD (SMT)
Case / Package 3-MCPH
Win Source Part Number 074828-MCH3106-TL
Ultra Librarian 3D Model Ultra Librarian MCH3106-TL CAD Model

Description

ON Semiconductor MCH3106-TL P-Channel MOSFET

The MCH3106-TL from ON Semiconductor is a high-performance P-Channel MOSFET designed to offer efficient power management in a variety of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the rigorous demands of modern electronic designs.

The MCH3106-TL boasts impressive specifications that make it suitable for high-speed switching applications. With a drain-source voltage (V<sub>DS) of -20V and a continuous drain current (I<sub>D) of -6A, it is capable of handling moderate power loads with ease. This makes it an ideal choice for portable devices, power management circuits, and other applications where efficient power conversion is crucial.

One of the key features of the MCH3106-TL is its low on-resistance (R<sub>DS(on)). This characteristic minimizes power loss during operation, leading to improved overall efficiency and reduced heat generation. As a result, devices incorporating this MOSFET can be more energy-efficient, which is particularly beneficial for battery-powered applications where extending battery life is of paramount importance.

The MOSFET comes in a compact SOT-428 package, which is known for its small footprint. This space-saving design allows for a more compact overall circuit layout, providing designers with greater flexibility when working with limited PCB real estate. Additionally, the SOT-428 package offers good thermal performance, contributing to the reliability and longevity of the device.

With its built-in gate protection diode, the MCH3106-TL is also designed to be rugged and resilient against the harsh conditions that can occur in electronic circuits. This feature helps to protect the gate oxide layer from static discharge and other potentially damaging events, ensuring a longer operational lifespan for the MOSFET.

In summary, the MCH3106-TL P-Channel MOSFET from ON Semiconductor is a versatile and efficient component that provides designers with a powerful tool for developing energy-conscious and space-efficient electronic products. Its low R<sub>DS(on), high-speed switching capability, and robust construction make it a reliable choice for a wide range of power management applications.

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