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Same model may have multiple batches, images only for reference.
IRF6100
Same model may have multiple batches, images only for reference.

IRF6100

Part No IRF6100
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.1A FLIP-FET
Datasheet
IRF6100 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1230pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.2W (Ta)
Maximum Rds On at Id,Vgs 65 mOhm @ 5.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 4-FlipFet
Dimension 4-FlipFet
Win Source Part Number 099013-IRF6100
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF6100 CAD Model

Description

The Infineon Technologies IRF6100 is a P-channel MOSFET device that has a maximum power dissipation of 2.2W (Ta).

  • Power Dissipation: 2.2W (Ta)
  • Status: sufficient supply and demand status
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 4-FlipFet case/package and dimension
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.1A (Ta)

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,800 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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