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Same model may have multiple batches, images only for reference.
SI7382DP-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI7382DP-T1-E3

Part No SI7382DP-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 14A PPAK SO-8
Datasheet
SI7382DP-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 097433-SI7382DP-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI7382DP-T1-E3 CAD Model

Description

This Vishay electronic component is a MOSFET type N-Channel with a Power Dissipation (Max) of 1.8W (Ta).

  • Type: MOSFET
  • Channel Type: N-Channel
  • Power Dissipation (Max): 1.8W (Ta)
  • Status: obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8281 $57.9670
170+ $0.6803 $115.6510
265+ $0.6584 $174.4760
365+ $0.6376 $232.7240
470+ $0.6156 $289.3320
630+ $0.5521 $347.8230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 58,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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