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Same model may have multiple batches, images only for reference.
BF799WE6327BTSA1 Real Image
Same model may have multiple batches, images only for reference.

BF799WE6327BTSA1

Part No BF799WE6327BTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN RF 20V SOT-323
Datasheet
BF799WE6327BTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Frequency - Transition 800MHz
Noise Figure (dB Typ @ f) 3dB @ 100MHz
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 40 @ 20mA, 10V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 097079-BF799WE6327BTSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian BF799WE6327BTSA1 CAD Model

Description

The BF799WE6327BTSA1 is a top-tier transistor suitable for critical RF applications, offering unmatched performance in signal handling and transmission quality. It meets the rigorous standards required for advanced technology uses.

Features and Benefits:

  • Outstanding linearity for accurate signal representation
  • Minimal signal distortion at peak frequencies
  • Compact and durable for various environmental conditions
  • High heat dissipation contributing to extended lifespan

Applications:

  • Advanced communication hardware
  • Military and defense RF applications
  • Scientific research equipment
  • High-resolution broadcasting systems

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