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Same model may have multiple batches, images only for reference.
BFG235 E6327 Real Image
Same model may have multiple batches, images only for reference.

BFG235 E6327

Part No BFG235 E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 15V SOT-223
Datasheet
BFG235 E6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 5.5GHz
Noise Figure (dB Typ @ f) 1.7dB @ 900MHz
Gain 12.5dB
Maximum Power Dissipation 2W
Typical Gain (hFE) (Min) 75 @ 200mA, 8V
Maximum Current Collector 300mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 039634-BFG235 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFG235 E6327 CAD Model

Description

Product Description

The BFG235 E6327 is a high-performance RF transistor offering robust performance in demanding radio frequency applications. Its enhanced design provides superior reliability.

Features and Benefits

  • Optimized for high-frequency circuits with a bandwidth capability of up to 3 GHz.
  • Excellent linearity, ensuring clear signal reproduction.
  • Low current consumption, contributing to energy-efficient designs.

Applications

  • Mobile and cordless phones
  • RF amplification circuits
  • Data transmission systems

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