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Same model may have multiple batches, images only for reference.
SI5441DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5441DC-T1-E3

Part No SI5441DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.9A 1206-8
Datasheet
SI5441DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 22nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028573-SI5441DC-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5441DC-T1-E3 CAD Model

Description

The Vishay SI5441DC-T1-E3 is a P-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 1.3W @ Ta
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.9A @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 22nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 55 mOhm @ 3.9A, 4.5V
  • Product Status: Obsolete (EOL)
  • Package: 1206-8 ChipFET
  • Mounting Technology: Surface-Mount
  • Operating Temperature Range: -55°C to 150°C
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7461 $59.6880
190+ $0.6122 $116.3180
295+ $0.5925 $174.7875
405+ $0.5740 $232.4700
525+ $0.5544 $291.0600
700+ $0.4978 $348.4600
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