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Same model may have multiple batches, images only for reference.
BFN19H6327XTSA1
Same model may have multiple batches, images only for reference.

BFN19H6327XTSA1

Part No BFN19H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANSISTOR AF SOT89-4
Datasheet
BFN19H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Max Vce (sat) 500mV @ 2mA, 20mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 30mA, 10V
Maximum Power Dissipation 1W
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT89
Win Source Part Number 1023234-BFN19H6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFN19H6327XTSA1 CAD Model

Description

The Infineon Technologies 1023234-BFN19H6327XTSA1 is a PNP transistor used in discrete semiconductor products.

  • Category: Discrete Semiconductor Products
  • Package: PG-SOT89
  • Temperature Range: Up to 150°C
  • Current Collector (Max): 200mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
  • Vce (sat) (Max): 500mV @ 2mA, 20mA

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110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
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Availability: 31,490 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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