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BFP182WE6327HTSA1

Part No BFP182WE6327HTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN RF 12V SOT-343
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.3dB @ 900MHz to 1.8GHz
Gain 22dB
Maximum Power Dissipation 250mW
Typical Gain (hFE) (Min) 70 @ 10mA, 8V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT343-4
Win Source Part Number 096744-BFP182WE6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFP182WE6327HTSA1 CAD Model

Description

Description

The BFP182WE6327HTSA1 RF transistor combines high-frequency performance with compact design, essential for cutting-edge communication devices. It supports a wide range of applications with its efficient and reliable operation.

Features and Benefits

  • High-frequency responsiveness, critical for modern RF applications.
  • Efficient power consumption, minimizing energy usage.
  • Compact form factor, fitting seamlessly into miniature designs.

Applications

  • Mobile communication devices
  • RF identification (RFID) systems
  • Instrumentation amplifiers

This RF transistor stands out as a high-value component for developers focused on portability and performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1796 $58.3700
785+ $0.1474 $115.7090
1,215+ $0.1429 $173.6235
1,675+ $0.1383 $231.6525
2,165+ $0.1337 $289.4605
2,895+ $0.1198 $346.8210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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