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BFR 183T E6327 Real Image
Same model may have multiple batches, images only for reference.

BFR 183T E6327

Part No BFR 183T E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SC-75
Datasheet
BFR 183T E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1.2dB to 2dB @ 900MHz to 1.8GHz
Gain 19.5dB
Maximum Power Dissipation 250mW
Typical Gain (hFE) (Min) 50 @ 15mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 1023252-BFR 183T E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFR 183T E6327 CAD Model

Description

The Infineon Technologies BFR 183T E6327 is a high-frequency NPN transistor.

  • Gain: 19.5dB
  • Frequency Transition: 8GHz
  • Noise Figure: 1.2dB to 2dB @ 900MHz to 1.8GHz
  • Maximum Current Collector: 65mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
  • Typical Gain (hFE) (Min): 50 @ 15mA, 8V
  • Package: PG-SC-75

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Pricing & Ordering

Quantity Unit Price Ext. Price
510+ $0.1280 $65.2800
1,220+ $0.1061 $129.4420
1,900+ $0.1021 $193.9900
2,600+ $0.0996 $258.9600
3,380+ $0.0958 $323.8040
4,550+ $0.0853 $388.1150
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Availability: 18,050 pieces
MOQ: 510 pcs
Order Increment : 1 pcs
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