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BFR182W H6327

Part No BFR182W H6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANS RF NPN 12V 35MA SOT323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.3dB @ 900MHz to 1.8GHz
Gain 19dB
Maximum Power Dissipation 250mW
Typical Gain (hFE) (Min) 70 @ 10mA, 8V
Maximum Current Collector 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 039638-BFR182W H6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BFR182W H6327 CAD Model

Description

Overview of the BFR182W H6327

The BFR182W H6327 is a high-performance RF transistor designed for a variety of signal amplification applications. Its compact size and robust design make it an ideal choice for engineers looking to optimize their circuits for RF stability and efficiency.

Applications

  • Wireless communication systems
  • RF signal amplification
  • Satellite communication
  • Broadband amplifiers

Features and Benefits

  • High-frequency operation
  • Low noise figure
  • High gain for efficient signal amplification
  • Durable construction for reliable performance

The BFR182W H6327 offers superior performance in demanding applications, making it a versatile choice for professionals working on cutting-edge electronic communication projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3285 $57.4875
420+ $0.2696 $113.2320
645+ $0.2611 $168.4095
890+ $0.2527 $224.9030
1,150+ $0.2443 $280.9450
1,535+ $0.2190 $336.1650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,300 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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