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BFS481 E6327

Part No BFS481 E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.2dB @ 900MHz to 1.8GHz
Gain 20dB
Maximum Power Dissipation 175mW
Typical Gain (hFE) (Min) 70 @ 5mA, 8V
Maximum Current Collector 20mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 039640-BFS481 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFS481 E6327 CAD Model

Description

Product Overview

The BFS481 E6327 is a compact NPN RF transistor tailored for superior performance in a variety of electronic projects. With a focus on low power consumption and high efficiency, it meets the demands of modern RF and microwave technologies.

Features and Benefits

  • Energy Efficient: Designed for low power consumption without sacrificing performance.
  • High Gain: Provides excellent signal amplification, crucial for effective communications.
  • Compact Size: Space-saving design suitable for compact devices.

Applications

  • Mobile communication devices
  • Signal processing units
  • Broadcast receivers

The BFS481 E6327 offers a blend of performance and efficiency, making it ideal for innovators in the electronic communication and signal processing sectors.

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