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Same model may have multiple batches, images only for reference.
BSB024N03LXG Real Image
Same model may have multiple batches, images only for reference.

BSB024N03LXG

Part No BSB024N03LXG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 145A 2WDSON
Datasheet
BSB024N03LXG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Ta), 145A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 4900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 201379-BSB024N03LXG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSB024N03LXG CAD Model

Description

BSB024N03LXG Efficient Low-Voltage MOSFET

The BSB024N03LXG is an efficient low-voltage MOSFET, perfect for use in a variety of low-power electronic circuits. This component's high efficiency makes it a staple in projects that require low energy consumption.

  • Applications/Projects:
    • Low-voltage power converters
    • Battery-powered devices
    • Portable electronics
  • Features and Benefits:
    • Low on-resistance
    • Optimized for low-voltage applications
    • High efficiency for longer battery life
    • Compact design for easy integration

Integrate the BSB024N03LXG into your designs to achieve optimal low-power performance and efficiency.

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