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Same model may have multiple batches, images only for reference.
BSB056N10NN3GXUMA2
Same model may have multiple batches, images only for reference.

BSB056N10NN3GXUMA2

Part No BSB056N10NN3GXUMA2
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description TRENCH >=100V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 50 V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-5-3
Package / Case DirectFET™ Isometric MN
Ultra Librarian 3D Model Ultra Librarian BSB056N10NN3GXUMA2 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3760 $52.2720
45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,980 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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