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Same model may have multiple batches, images only for reference.
BSC010N04LSIATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC010N04LSIATMA1

Part No BSC010N04LSIATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 37A 8TDSON
Datasheet
BSC010N04LSIATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6200pF @ 20V
Vgs (Maximum) ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Maximum) 2.5W (Ta), 139W (Tc)
Rds On (Maximum) @ Id, Vgs 1.05 mOhm @ 50A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TDSON-8 FL
Package 8-PowerTDFN
Win Source Part Number 770401-BSC010N04LSIATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC010N04LSIATMA1 CAD Model

Description

The BSC010N04LSIATMA1 is a MOSFET manufactured by Infineon Technologies.

  • Series: OptiMOS
  • Current-Continuous Drain (Id): 37A (Ta), 100A (Tc)
  • Drive Voltage: 4.5V, 10V
  • Equipped with: Schottky diode (body)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TDSON-8 FL
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5703 $51.3270
190+ $0.5342 $101.4980
295+ $0.5161 $152.2495
420+ $0.4800 $201.6000
545+ $0.4620 $251.7900
680+ $0.4440 $301.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,350 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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