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BSC010NE2LSI

Part No BSC010NE2LSI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 38A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 59nC @ 10V
Max Input Capacitance 4200pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Maximum Rds On at Id,Vgs 1.05 mOhm @ 30A, 10V
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 104029-BSC010NE2LSI
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC010NE2LSI CAD Model

Description

BSC010NE2LSI Semiconductor

The BSC010NE2LSI stands out for its enhanced integration and performance in industrial-grade applications. Its robust construction guarantees reliability and efficiency in challenging environments.

  • Applications:
    • Industrial motor drives
    • Instrumentation circuits
    • Smart grid technology
    • Energy-efficient home appliances
  • Features and Benefits:
    • Improved thermal management for high durability
    • High switching speed reduces operational delays
    • Exceptional energy efficiency lowers operational costs
    • Wide operating temperature range enhances versatility

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9363 $51.4965
115+ $0.8770 $100.8550
180+ $0.8474 $152.5320
255+ $0.7881 $200.9655
330+ $0.7585 $250.3050
415+ $0.7289 $302.4935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 478,200 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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