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BSC010NE2LSIATMA1

Part No BSC010NE2LSIATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 38A/100A TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 46 Weeks
Features N-Channel 25 V 38A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7
Manufacturer Infineon Technologies
Series OptiMOS™
Package Reel - TR
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package PG-TDSON-8-7
Family Name BSC010
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number BSC010NE2LSIATMA1DKR, BSC010NE2LSIDKR, BSC010NE2LSIATMA1TR, BSC010NE2LSICT-ND, BSC010NE2LSI, BSC010NE2LSIATMA1CT, BSC010NE2LSIDKR-ND, BSC010NE2LSITR-ND, BSC010NE2LSI-ND, SP000854376, BSC010NE2LSICT
Quantity per package 5000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 864621-BSC010NE2LSIATMA1
Ultra Librarian 3D Model Ultra Librarian BSC010NE2LSIATMA1 CAD Model

Description

The Infineon Technologies BSC010NE2LSIATMA1 is a high-performance N-channel MOSFET transistor that is part of the OptiMOS™ series.

  • Drain-Source Voltage: 25 V
  • Continuous Drain Current (Ta): 38 A (Ta)
  • Continuous Drain Current (Tc): 100 A (Tc)
  • Power Dissipation (Ta): 2.5 W (Ta)
  • Power Dissipation (Tc): 96 W (Tc)
  • Mounting Type: Surface Mountable
  • Package: PG-TDSON-8-7
  • Supply and Demand: Limited
  • Application: Various applications that require high-performance N-channel MOSFET transistors

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9363 $51.4965
115+ $0.8770 $100.8550
180+ $0.8474 $152.5320
255+ $0.7881 $200.9655
330+ $0.7585 $250.3050
415+ $0.7289 $302.4935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 457,680 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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