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Same model may have multiple batches, images only for reference.
BSC014N03MSGATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSC014N03MSGATMA1

Part No BSC014N03MSGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A/100A TDSON  /  N-Channel 30 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
Datasheet
BSC014N03MSGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 173 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000394681,BSC014N03MS G-ND,BSC014N03MS GDKR-ND,BSC014N03MS G,BSC014N03MSG,BSC014N03MS GDKR,BSC014N03MS GCT-ND,BSC014N03MS GTR-ND,BSC014N03MSGATMA1CT,BSC014N03MSGATMA1DKR,BSC014N03MS GCT,BSC014N03MSGATMA1TR,2156-BSC014N03MSGATMA1,IFEINFBSC014N03MSGATMA1
Standard Package 5,000
Win Source Part Number 983896-BSC014N03MSGATMA1
Ultra Librarian 3D Model Ultra Librarian BSC014N03MSGATMA1 CAD Model

Description

The Infineon Technologies BSC014N03MSGATMA1 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Application: Discrete Semiconductor Products
  • Power: 2.5 W
  • Drain-Source Voltage: 30 V
  • Continuous Drain Current: 30 A @ 25°C and 100 A @ Tc
  • Rds on: 1.4 mOhm @ 30 A and 10 V
  • Vgs(th): 2 V @ 250 μA
  • Package Type: 8-PowerTDFN
  • Supplier Device Package: PG-TDSON-8-1
  • Gate Charge: 173 nC @ 10 V
  • Input Capacitance: 13000 pF @ 15 V
  • Operating Temperature: -55°C to 150°C

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