The BSC016N06NSATMA1 is a MOSFET technology electronic component from Infineon Technologies that is designed for use in discrete semiconductor products.

• Polarity: N-Channel
• Power Dissipation: 2.5W (Ta), 139W (Tc)
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 30A (Ta), 100A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 2.8V @ 95μA
• Maximum Gate Charge: 71nC @ 10V
• Maximum Input Capacitance: 5200pF @ 30V
• Maximum Rds On: 1.6 mOhm @ 50A, 10V
• Package: PG-TDSON-8
• Dimension: 8-PowerTDFN
• Mounting: Surface Mount
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Status: Active
• Temperature Range: -55°C to 150°C (TJ)
• Supply and Demand Status: Limited