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Same model may have multiple batches, images only for reference.
BSC022N04LSATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSC022N04LSATMA1

Part No BSC022N04LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TDSON-8
Datasheet
BSC022N04LSATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 2600pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024322-BSC022N04LSATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC022N04LSATMA1 CAD Model

Description

The BSC022N04LSATMA1 MOSFET is a N-channel polarity, surface-mount device with a drain-source breakdown voltage of 40V and a continuous drain current of 100A @ 25°C from Infineon Technologies.

  • Power dissipation: 2.5W (Ta)
  • Maximum Rds On: 2.2 mOhm @ Id,Vgs of 50A, 10V
  • MOSFET comes in a PG-TDSON-8 package
  • Gate-source threshold voltage: 2V @ 250μA
  • Maximum gate-source voltage: ±20V
  • Maximum input capacitance: 2600pF @ 20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.1971 $55.1826
12+ $8.6150 $103.3800
19+ $8.3239 $158.1541
26+ $7.7418 $201.2868
34+ $7.4508 $253.3272
42+ $7.1598 $300.7116
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Availability: 23,220 pieces
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